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Some emission properties of Alternating Current Electroluminescencent (AC EL) structures containing thin chalcogenide films of the systems As-S or Ge-Sb-S are investigated by means of optogalvanic effect. The optogalvanic characteristics of red emitting structures at different conditions of their excitation are presented. Conclusions about the behaviour of the emission are drawn and some possibilities of the proposed method for the examination of the AC EL structures are analysed. INTRODUCTIONThe AC EL structures are a new type of alternating current structures created by the combination of two technologies, i.e. the binder and vacuum ones (1, 21. Besides the constructive. technological and operative advantages AC EL structures save electric power and are of