“…Also, incorporating the combustion chemistry in plasma-induced processes reduces the oxide formation time, but the device compatibility is yet unclear . In recent times, rapid thermal annealing (RTA) has also been reported for metal oxide layer formation, which significantly reduces the device processing time, but, due to the nature of the thermal cycling process, the applicability is, therefore, substrate-limited. In a similar route, photonically cured , (i.e., pulsed Xe) and also near-infrared-induced (either continuous or time-modulated) heating has also been demonstrated , to develop the perovskite layer only, which is, however, the least of concern due to its low formation energy.…”