We present structural, electronic, and morphological characterization of thin (7.5 nm, 9 unit cells) and ultrathin (1.7 nm, 2 unit cells) Fe3O4 layers grown on SrTiO3(001) by oxygen assisted molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) methods. The analysis show single-phase single oriented (001) layers that grow forming a coincidence lattice of the order 13. Such an incommensurate growth is present for all the layers, independent of the evaporation method and layer thickness. The magnetite layers, which are strain-free, provide a sharp interface with the substrate. The films grown by the MBE method present negligible interaction with the substrate and smooth surfaces. The films grown by the PLD evaporation method present an expansion of the last atomic layer of the substrate and rough layer surface. However, the obtained structural domain size of 10 nm is identical for the layers grown by both evaporation techniques corresponding to the size of the coincidence lattice. We determine that the magnetic and transport properties inherent to the Fe3O4/STO heterostructure are not related to the lattice strain but to the formation of antiphase boundary defects.

No abstract

All-wet processes are gaining a renewed interest for the removal of photoresist (PR) after plasma etching in back-end of line (BEOL) applications. However, degradation of DUV PR by the etch plasma results in a modified top layer of the PR that is cross-linked (socalled crust) and that is no longer soluble in pure organic solvents. This study investigates the modification of a 193-nm post-etch PR by UV irradiation. We show that a 254 nm mercury vapor UV lamp and a 248 nm UV excimer laser can cause scissioning of C-C bonds in the PR main chain, thereby improving the dissolution of the PR in organic solvent.