No abstract

This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-ȝm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz 1/2 , and a noise figure of 29 dB. The power dissipation of the detector is 75 ȝW. Reasonable agreement between simulations and measurements is obtained. To the authors' best knowledge, the detector in this work achieves the highest responsivity reported to date for any solid-state W-band detector.

No abstract

A fully-integrated silicon-based 94-GHz direct-detection imaging receiver with on-chip Dicke switch and baseband circuitry is demonstrated. Fabricated in a 0.18-µm SiGe BiCMOS technology (f T /f MAX = 200 GHz), the receiver chip achieves a peak imager responsivity of 43 MV/W with a 3-dB bandwidth of 26 GHz. A balanced LNA topology with an embedded Dicke switch provides 30-dB gain and enables a temperature resolution of 0.3-0.4 K. Initial imaging measurements using the chip along with off-chip antennas are also presented. The imager chip consumes 200 mW from a single 1.8-V power supply.