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ArF Lithography that is expected the candidate for next generation optical lithography and attenuated Phase Shift Mask (att-PSM) will be adapted for 0.12 jim design-rule and beyond. For the next-generation lithography, the most of important requirement for mask process is enough resolution and good pattern fidelity to generate various critical patterns, ofwhich sizes are below O.5um main pattern including OPC patterns.In this paper, we describe in terms of blank mask properties, mask making process and wafer performance of ArF attenuated Phase Shift Mask (att-PSM) using TiN/Si3N4 (abbreviated as TiN/SiN) multi-layer for Next-Generation Lithography (NGL). In view point ofmaterial, we have evaluated for the applicability ofTiN/SIN multi-layer to ArF lithography as compared with non-stoichiometric MoSiON-based single-layer structure. In mask making process, we used Chemically amplified resist (CAR) process characteristics and Dry etching system for improvement of enough resolution and pattern fidelity Also we have investigated wafer performance for ArF att-PSM in terms of process windows as compared with BIM (Binary Intensity Mask) in l2Onm D/R real cell pattern and lOOnm L/S( Line and Space) DIR pattern, respectively.