Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO 2 , have been favored by lots of researchers because of its simple structure, high integration, fast operation speed, low power consumption, and high compatibility with advanced (complementary metal oxide silicon) CMOS technologies. In this paper, a 20-level stable resistance states Al-doped HfO 2 -based memristor is presented. Its cycles endurance, data retention time, and resistance ratio are larger than 10 3 , > 10 4 s, and > 10, respectively.

A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO x /Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 • C decreased, and the switching ratio and uniformity improved. Tests on the device's cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10 5 s of lifetime (85 • C). The switching mechanisms of the devices before and after annealing were also discussed.

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