Surface acoustic wave devices have been fabricated on a GaAs 100 substrate to demonstrate the capability of 2D Raman microscopy as an imaging technique for acoustic waves on the surface of a piezoelectric substrate. Surface acoustic waves are generated using a two-port interdigitated transducer platform, which is modified to produce surface standing waves. We have derived an analytical model to relate Raman peak broadening to the near-surface strain field of the GaAs surface produced by the surface acoustic waves. Atomic force microscopy is used to confirm the presence of a standing acoustic wave, resolving a total vertical displacement of 3 nm at the antinode of the standing wave. Stress calculations are performed for both imaging techniques and are in good agreement, demonstrating the potential of this Raman analysis.

Significance The free energy functional is a central component of continuum dynamical models used to describe phase transitions, microstructural evolution, and pattern formation. However, despite the success of these models in many areas of physics, chemistry, and biology, the standard free energy frameworks are frequently characterized by physically opaque parameters and incorporate assumptions that are difficult to assess. Here, we introduce a mathematical formalism that provides a unifying umbrella for constructing free energy functionals. We show that Ginzburg–Landau framework is a special case of this umbrella and derive a generalization of the widely employed Cahn–Hilliard equation. More broadly, we expect the framework will also be useful for generalizing higher-order theories, establishing formal connections to microscopic physics, and coarse graining.

No abstract

Analysis of interdigitated transducers often relies on phenomenological models to approximate device electrical performance. While these approaches prove essential for signal processing applications, phenomenological models provide limited information on the device’s mechanical response and physical characteristics of the generated acoustic field. Finite element method modeling, in comparison, offers a robust platform to study the effects of the full device geometry on critical performance parameters of interdigitated transducer devices. In this study, we fabricate a surface acoustic wave resonator on semi-insulating GaAs [Formula: see text], which consists of an interdigitated transducer and acoustic mirror assembly. The device is subsequently modeled using fem software. A vector network analyzer is used to measure the experimental device scattering response, which compares well with the simulated results. The wave characteristics of the experimental device are measured by contact-mode atomic force microscopy, which validates the simulation’s mechanical response predictions. We further show that a computational parametric analysis can be used to optimize device designs for series resonance frequency, effective coupling coefficient, quality factor, and maximum acoustic surface displacement.

Arsenic's high vapor pressure leads to thermal instability during high-temperature processing (>370 °C) of GaAs, contributing to the performance degradation of subsequently fabricated devices. The resulting surface damage also obfuscates the exact quantitative characterization of the diffusion process, a critical step in device manufacturing. In this experiment, an encapsulant-and-sacrificial-layer procedure is employed to reduce arsenic sublimation and preserve a smooth surface. A capped GaAs/InGaAs/GaAs quantum well structure is subjected to rapid thermal annealing, and AFM, SEM, and energy-dispersive x-ray spectroscopy are used to compare the surface qualities of the postannealed encapsulated GaAs against the reference GaAs. For the encapsulated substrate, a smooth surface with an average root-mean-squared value of 6.5 Å is achieved after high-temperature processing. SIMS analysis is used to obtain the diffused indium atomic concentration profiles for a smooth and roughened GaAs surface and their corresponding diffusion parameters. The interdiffusion characterization process demonstrates in a GaAs/InGaAs system how precise diffusion parameter extraction requires preserving an atomically smooth surface when using surface-sensitive techniques.