Surface-enhanced Raman scattering (SERS) spectra of 4-mercaptobenzoic acid (4-MBA) have been investigated on the surface of Cu2O nanospheres. The SERS signals were believed to originate from the static chemical enhancement, resonant chemical enhancement and electromagnetic enhancement. The coupling between the adsorbates and the semiconductor, evidenced by the shift in absorption spectrum of modified Cu2O and the enhancement of non-totally symmetric modes of the 4-MBA and 4-mercaptopyridine (4-MPY) molecules, were invoked to explain the experimental results. Furthermore, simulations were employed to investigate the nature of the enhancement mechanisms operative between the molecules and the semiconductor. Density functional theory (DFT) calculations suggested a charge transfer (CT) transition process between the molecules and the Cu2O nanospheres. Three-dimensional finite-difference time domain (3D-FDTD) simulations were conducted to map out the electromagnetic field around the Cu2O nanospheres. The experimental and simulation results have revealed the promise of the Cu2O nanospheres as a good SERS substrate and the prospect of using the SERS substrate as a valuable tool for in situ investigation and assay of the adsorption behavior on semiconductor surfaces.

We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10 16 -10 17 cm −3 and mobility of 1 -10 cm 2 V −1 s −1 . Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I = 40 mA and defect-related emissions in the blue-yellow spectrum range.

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The deep understanding of nucleation and growth mechanisms is fundamental for the precise control of the size, layer number, and crystal quality of two-dimensional (2D) transition-metal dichalcogenides (TMDs) with the chemical vapor deposition (CVD) method. In this work, we present a systematic spectroscopic study of CVD-grown MoS2, and two types of MoS2 flakes have been identified: one type of flake contains a central nanoparticle with the multilayer MoS2 structure, and the other is dominated by triangular flakes with monolayer or bilayer structures. Our results demonstrate that two types of flakes can be tuned by changing the growth temperature and carrier-gas flux, which originates from their different nucleation mechanisms that essentially depends on the concentration of MoO3–x and S vapor precursors: a lower reactant concentration facilitates the 2D planar nucleation that leads to the monolayer/bilayer MoS2 and a higher reactant concentration induces the self-seeding nucleation which easily produces few-layer and multilayer MoS2. The reactant-concentration dependence of nucleation can be used to control the growth of MoS2 and understand the growth mechanism of other TMDs.