Multiferroic heterostructures composed of complex oxide thin films and ferroelectric single crystals have aroused considerable interest due to the electrically switchable strain and charge elements of oxide films by the polarization reversal of ferroelectrics. Previous studies have demonstrated that the electric‐field‐control of physical properties of such heterostructures is exclusively due to the ferroelectric domain switching‐induced lattice strain effects. Here, the first successful integration of the hexagonal ZnO:Mn dilute magnetic semiconductor thin films with high performance (111)‐oriented perovskite Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PMN‐PT) single crystals is reported, and unprecedented charge‐mediated electric‐field control of both electronic transport and ferromagnetism at room temperature for PMN‐PT single crystal‐based oxide heterostructures is realized. A significant carrier concentration‐tunability of resistance and magnetization by ≈400% and ≈257% is achieved at room temperature. The electric‐field controlled bistable resistance and ferromagnetism switching at room temperature via interfacial electric charge presents a potential strategy for designing prototype devices for information storage. The results also disclose that the relative importance of the strain effect and interfacial charge effect in oxide film/ferroelectric crystal heterostructures can be tuned by appropriately adjusting the charge carrier density of oxide films.

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We report a topotactic reaction strategy to achieve the oriented attachment (OA) of colloidal metal chalcogenide quantum dots into micrometer-sized nanosheets and nanobelts (up to 6-7 μm) on both mechanically rigid and flexible substrates. The nonstoichiometric composition, crystallization and Ag doping were controlled. The strong surface adsorption of cations and thiol ligands facilitated micrometer-scale three-dimensional OA. The cations induced the formation of electrostatic forces, cation passivation on the nanosheet surface and overlap packing of the nanosheets, enabling good contact with the substrates and improved electron transport without severe obstruction of organic insulating barriers. The observation of weak anti-localization phenomena and Hall effect sensitivity (up to 188%) of non-stoichiometric Ag 2-δ Te nanosheet films as well as the improved I-V and photoresponse properties of Ag-doped CdX nanosheet films confirm efficient electron transport. The stable I-V properties of these nanosheet films on flexible substrates, even under bending forces, testify to their potential in flexible device applications.

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