The recently discovered novel properties of two dimensional materials largely rely on the layer-critical variation in their electronic structure and lattice symmetry. Achieving layer-by-layer precision patterning is thus crucial for junction fabrications and device engineering, which hitherto poses an unprecedented challenge. Here we demonstrate laser thinning and patterning with layer-by-layer precision in a two dimensional (2D) quantum material MoS2. Monolayer, bilayer and trilayer of MoS2 films are produced with precise vertical and lateral control, which removes the extruding barrier for fabricating novel three dimensional (3D) devices composed of diverse layers and patterns. By tuning the laser fluence and exposure time we demonstrate producing MoS2 patterns with designed layer numbers. The underlying physics mechanism is identified to be temperature-dependent evaporation of the MoS2 lattice, verified by our measurements and calculations. Our investigation paves way for 3D device fabrication based on 2D layered quantum materials.

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We report the near to middle infrared luminescence and energy transfer process of Er3+/Yb3+ co-doped fluorotellurite glasses under 980, 1550 and 800 nm excitations, respectively. Using a 980 nm laser diode pump, enhanced 1.5 and 2.7 μm emissions from Er3+:I13/2→4I15/2 and I11/2→4I13/2 transitions are observed, in which Yb3+ ions can increase pumping efficiency and be used as energy transfer donors. Meanwhile, Yb3+ can also be used as an acceptor and intensive upconversion luminescence of around 1000 nm is achieved from Er3+:I11/2→4I15/2 and Yb3+: F5/2→4F7/2 transitions using 1550 nm excitation. In addition, the luminescence properties and variation trendency by 800 nm excitation is similar to that using 1550 nm excitation. The optimum Er3+ and Yb3+ ion ratio is 1:1.5 and excess Yb3+ ions decrease energy transfer efficiency under the two pumpings. These results indicate that Er3+/Yb3+ co-doped fluorotellurite glasses are potential middle- infrared laser materials and may be used to increase the efficiency of the silicon solar cells.