Bi3.7Nd0.3Ti3O12 (BNT0.3) films were fabricated on indium tin oxide/glass substrates using a metal organic decomposition method at temperatures ranging from 500° to 650°C. A predominantly (100)‐oriented BNT0.3 film can be obtained even at 550°C. The growth mode of the predominantly (100)‐oriented BNT0.3 films fabricated by the sequential layer annealing method was discussed based on the structure evolution with the annealing temperature and the film thickness. The largest values of the remanent polarization and piezoresponse are observed in the BNT0.3 film annealed at 650°C, which can be ascribed to the grain growth and the release of the in‐plane residue tension stress.

The BiFe0.95Zn0.05O3 (BFZO) thin film was fabricated on indium tin oxide/glass substrate using a metal organic decomposition method combined with sequential layer annealing. Double ferroelectric hysteresis loops were observed in the as‐deposited film, indicating that the film is partially aged. This aging phenomenon can be attributed to the formation of defect complexes between oxygen vacancies and acceptors of in the film. The nonreversible transition from double ferroelectric hysteresis loop to the single one can occur during the course of increasing the applied electric field. More importantly, an asymmetry of the coercive field can be found to be strongly dependent on the magnitude and frequency of the electric field. This phenomenon was discussed based on the asymmetric driving force for domain backswitching in BFZO film with a preferential polarization.