Background Studies have reminded that cardiovascular metabolic comorbidities made patients more susceptible to suffer 2019 novel corona virus (2019-nCoV) disease , and exacerbated the infection. The aim of this analysis is to determine the association of cardiovascular metabolic diseases with the development of COVID-19. Methods A meta-analysis of eligible studies that summarized the prevalence of cardiovascular metabolic diseases in COVID-19 and compared the incidences of the comorbidities in ICU/severe and non-ICU/severe patients was performed. Embase and PubMed were searched for relevant studies. Results A total of six studies with 1527 patients were included in this analysis. The proportions of hypertension, cardiacerebrovascular disease and diabetes in patients with COVID-19 were 17.1%, 16.4% and 9.7%, respectively. The incidences of hypertension, cardia-cerebrovascular diseases and diabetes were about twofolds, threefolds and twofolds, respectively, higher in ICU/severe cases than in their non-ICU/severe counterparts. At least 8.0% patients with COVID-19 suffered the acute cardiac injury. The incidence of acute cardiac injury was about 13 folds higher in ICU/severe patients compared with the non-ICU/severe patients. Conclusion Patients with previous cardiovascular metabolic diseases may face a greater risk of developing into the severe condition and the comorbidities can also greatly affect the prognosis of the COVID-19. On the other hand, COVID-19 can, in turn, aggravate the damage to the heart.

All-inorganic perovskite CsPbBr has been considered as one of the star semiconductors due to its inspiring optoelectronic properties and higher stability than the organic-inorganic hybrid counterparts. The preparation of large-size single crystals with low trap density and the performance optimization on the devices still challenge the commercial application of this material. Here the large transparent CsPbBr single crystal (ϕ 24 mm × 90 mm) was grown by a modified Bridgman method. With the determination of crystallographic directions, the anisotropic optoelectronic properties were investigated for the first time. The result shows a high electron mobility (11.61 cm/(V s)) along the b axis, one order of magnitude higher than that along the c axis. Moreover, the photoresponse measurement yields a high responsivity (5.83 A/W) and external quantum efficiency (1360%) on the (001) plane irradiated by the 532 nm laser diode with 1 mW/cm under 10 V bias, which is a 305% enhancement compared with the (010) plane. Our study on anisotropic optoelectronic properties of CsPbBr will provide a significant approach to enhance the performance of single-crystalline devices.

In particular, various X-ray applications with different energies result in different requirements for the detector. For instance, both X-ray diffraction (XRD) and X-ray fluorescence mainly need to detect X-rays with energies lower than 10 keV in scientific research. In contrast, X-rays with energy of 25-50 keV are used to produce images in mammography and chest radiography, [4] while computed tomography (CT) is equipped with digital X-ray image detectors with energy of 80-150 keV. [5,6] Current semiconductor materials such as Si, α-Se, HgI 2 , PbI 2 , and CdZnTe (CZT) are widely applied in direct detectors but suffer from some drawbacks. [7][8][9] Si and α-Se detectors have small attenuation coefficients for light atoms that limit the detection of X-rays to less than 50 keV. HgI 2 and PbI 2 detectors have large leakage currents and poor stability. A commercial CZT detector, which has excellent energy resolution and good photopeak efficiency, is expensive for single crystal (SC) growth and suffers from defects related to charge trapping. [10] Therefore, it is necessary to explore new materials for high-performance radiation detection.In recent years, metal halide perovskites have attracted increasing attention for room-temperature nuclear radiation detection due to their high atomic number (Cs,55, Pb, 82, Br, 35 and I,53), tunable band gap (E g = 1.56-3 eV), [11,12] high resistivity (R = 10 7 -10 12 Ω cm), [13,14] large mobility lifetime product (μτ = 10 −5 to 10 −2 cm 2 V −1 ), [15,16] and low cost in SC growth. These advantageous properties result in large ray attenuation and increased carrier collection efficiency (CCE) for both perovskite SCs and polycrystalline thin films. However, despite their high sensitivity of ≈10 6 -10 8 µC Gy −1 cm −2 , which is two to seven orders of magnitude higher than that of α-Se (20 µC Gy −1 cm −2 ) and CZT (12 000 µC Gy −1 cm −2 ), [17,18] and extremely low detection limit of 0.61 nGy s −1 , which is four orders of magnitude smaller than regular medical diagnostic requirement of 5.5 εGy s −1 , [19] previous studies conducted using these materials have mainly focused on the detection of soft X-rays with energy of several to tens of keV. [18,[20][21][22][23] Few studies have been performed on detecting hard X-rays, specifically in the range greater than 100 keV, which is required in CT imaging and positron emission tomography. In fact, the penetration depthsThe relatively low resistivity and severe ion migration in CsPbBr 3 significantly degrade the performance of X-ray detectors due to their high detection limit and current drift. The electrical properties and X-ray detection performances of CsPbBr 3 −nIn single crystals are investigated by doping the iodine atoms into the melt-grown CsPbBr 3 . The resistivity of CsPbBr 3 −nIn single crystals increases from 3.6 × 10 9 (CsPbBr 3 ) to 2.2 × 10 11 (CsPbBr 2 I) Ω cm, restraining the leak current and decreasing the detection limit of the detector. Additionally, CsPbBr 3 −nIn single crystals exhibit stable dark currents, arising fro...

All-inorganic lead-free halide perovskites have attracted interest owing to their high ambient and thermal stabilities, excellent optoelectronic properties, and environmental friendliness. Herein, the bismuth-based halide perovskite Cs 3 Bi 2 Br 9 single crystals were successfully grown to a diameter of 12 mm and length of 40 mm using a modified Bridgman method for the first time. The resistivity and transmittance of transparent and crack-free Cs 3 Bi 2 Br 9 single crystal are~6.8×10 11 Ω cm and~80%, respectively. The carrier mobility of the (−120) plane is 0.17 cm 2 V −1 s −1 along the [010] orientation (b axis), and the trap density is 9.7×10 10 cm −3 . Moreover, Cs 3 Bi 2 Br 9 single crystals exhibit excellent potential for X-ray detection, including a high absorption coefficient, a superior X-ray sensitivity of~230.4 μC Gy air −1 cm −2 , and an ultra-low and no-drift dark current density of~17.8 pA mm −2, which enables lower noise and is also beneficial to the ultralow detection limit for X-ray detectors. Our study shows that Cs 3 Bi 2 Br 9 is a promising candidate for X-ray detection applications.