Conventional optical cytometric techniques usually measure fluorescence or scattering signals at fixed angles from flowing cells in a liquid stream. Here we develop a novel cytometer that employs a scanning optical fiber to illuminate single static cells on a glass slide, which requires neither microfluidic fabrication nor flow control. This static cytometric technique measures two dimensional (2D) light scattering patterns via a small numerical aperture (0.25) microscope objective for label-free single cell analysis. Good agreement is obtained between the yeast cell experimental and Mie theory simulated patterns. It is demonstrated that the static cytometer with a microscope objective of a low resolution around 1.30 lm has the potential to perform high resolution analysis on yeast cells with distributed sizes. The capability of the static cytometer for size determination with submicron resolution is validated via measurements on standard microspheres with mean diameters of 3.87 and 4.19 lm. Our 2D light scattering static cytometric technique may provide an easy-to-use, label-free, and flow-free method for single cell diagnostics. V C 2015 International Society for Advancement of Cytometry
Two-dimensional (2D) light scattering patterns of single microspheres, normal granulocytes and leukemic cells are obtained by label-free static cytometry. Statistical results of experimental 2D light scattering patterns obtained from standard microspheres with a mean diameter of 4.19 μm agree well with theoretical simulations. High accuracy rates (greater than 92%) for label-free differentiation of normal granulocytes and leukemic cells, both the acute and chronic leukemic cells, are achieved by analyzing the 2D light scattering patterns. Our label-free static cytometry is promising for leukemia screening in clinics.
Nickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp 2 ) and oxygen (O 2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition temperature, NiCp 2 pulse time, and O 2 plasma pulse time. In terms of deposition temperatures between 225 and 275°C, a stable growth rate of ∼0.17 Å/cycle is obtained, meanwhile, the deposited films contain Ni(II)−O, Ni(III)−O, Ni(II)−OH, C−C bonds and metallic Ni atoms, and exhibit a smooth surface with root-mean-square roughness of 0.37 nm. As the deposition temperature increases from 150 to 350°C, the deposited NiO film changes from an amorphous state to a NiO (200) orientation-dominated texture and further to NiO (111) and (200) orientations concomitant polycrystalline one; at the same time, the transmittance of the film shows a decline tendency, and the optical band gap decreases from 3.69 to 3.48 eV. Furthermore, it is found that the deposited NiO film behaves like a dielectric rather than a semiconductor, and for the NiO film deposited at 250°C, a dielectric constant of 16.7 is demonstrated together with a film composition of 51.6% Ni, 40% O and 8.4% C.
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