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Ba ( Sn 0.15 Ti 0.85 ) O 3 thin films were grown on the LaNiO3 buffered LaAlO3, SrTiO3, MgO, and Al2O3 single crystal substrates, respectively. These substrates provide a systematic change in the stress while maintaining the same film microstructure. The stress in the thin film induces an obvious change in the dielectric behavior. The reduction in the ferroelectric transition temperature with increasing biaxial tensile stress is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films. The in-plane tensile stress in this study reduces the unit cell along electric field in the parallel plate capacitor structure and decreases the tunability.

Barium stannate titanate Ba(Sn0.15Ti0.85)O3 (BTS) thin films with different thicknesses were grown by sol-gel process on single crystal LaAlO3 (LAO) and Pt/Ti/SiO2/Si substrates, respectively. Coplanar capacitance and parallel plate capacitance structure configurations were formed by preparing interdigital electrodes and parallel plate electrodes on BTS thin films. Both of the films exhibited an enhanced dielectric constant and tunability as the film thickness increases but these two cases are actually based on different mechanisms. The thickness dependent dielectric properties of the films deposited on Pt/Ti/SiO2/Si substrates were mainly attributed to the “dead layer” effect while those of the films grown on LAO substrates were due to strain and grain size of the films.