Thickness-dependent dielectric and tunable properties of barium stannate titanate thin films

Abstract

Barium stannate titanate Ba(Sn0.15Ti0.85)O3 (BTS) thin films with different thicknesses were grown by sol-gel process on single crystal LaAlO3 (LAO) and Pt/Ti/SiO2/Si substrates, respectively. Coplanar capacitance and parallel plate capacitance structure configurations were formed by preparing interdigital electrodes and parallel plate electrodes on BTS thin films. Both of the films exhibited an enhanced dielectric constant and tunability as the film thickness increases but these two cases are actually based on different mechanisms. The thickness dependent dielectric properties of the films deposited on Pt/Ti/SiO2/Si substrates were mainly attributed to the “dead layer” effect while those of the films grown on LAO substrates were due to strain and grain size of the films.

Influence of Space Charge Layers on the Dielectric Properties of Ba0.6Sr0.4TiO3Nanostructured Thin Films

“…It is observed that the dielectric constant of the film increases with the increasing film thickness. Similar results have been reported by other workers [16][17][18]. It has been reported that the reduction of dielectric constant in ferroelectric thin films can be explained by the existence of interfacial "low dielectric constant space charge layers at the film-electrode interfaces and grain boundaries" [17,19,20].…”

Enhanced tunable properties of Bi1.5MgNb1.5O7 thin films grown on Pt–Si substrates using amorphous TiOx buffer layers

“…Besides, at high annealing temperature (750 1C), Pt atoms have enough energy to diffuse though BMN layers and oxygen atoms through platinum, which leads to the formation of a large number of oxygen vacancies at the BMN/Pt interface. The diffusion of Pt atoms and oxygen vacancies causes a 'dead layer' near the interface between the BMN films and the electrodes [12,13]. These interfacial dead layers show much lower dielectric constant than BMN films and act as a small capacitance in series with the film bulk capacitance [14], thereby leading to a severe reduction in the overall dielectric constant of BMN.…”

Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review

“…Regardless of the deposition techniques used, thin-film layer thickness, microstructural defects [ 173 ], and microstructural properties ( G , ρ , residual stresses) [ 174 ] influence the electrical properties such as ε r , Pr , Ps and BDS [ 173 , 175 , 176 ]. The dependence of ε r on the grain size is already well established in the previous sections and by Buscaglia and Randall [ 24 ].…”