No abstract

An alkaline developable and negative‐type PSPI with a high sensitivity and excellent mechanical properties based on a poly(amic acid) (PAA) and a photo‐base generator has been developed. The PAA was prepared by the polycondensation of p‐phenylenediamine (PDA) with an equimolar of 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA) and 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6‐FDA) and converted thermally to the corresponding polyimide, PI(PDA‐BPDA/6‐FDA). PI(PDA‐BPDA/6‐FDA) showed the high thermal and mechanical properties and the dimensional stability such as the thermal decomposition temperature of 530°C, glass transition temperature of 369°C, linear coefficient of thermal expansion of 28 ppm/K, ultimate tensile strength of 148 MPa, elongation at break of 25% and dielectric constant of 2.8. The PSPI was formulated directly from PAA(PDA‐BPDA/6‐FDA) with a photo‐base generator (PBG), (E)‐3‐(2‐hydroxy‐4‐methoxyphenyl)‐1‐(piperidin‐1‐yl)prop‐2‐en‐1‐one (HMPP) (10 wt% to PAA) and the optimized parameters for photolithographic process were investigated including the PBG content, post‐exposure bake (PEB) temperature, and PEB time. The PSPI based on PAA(PDA‐BPDA/6‐FDA) and HMPP (10 wt% to PAA) showed a sensitivity of 114 mJ/cm2 and contrast of 1.29 when exposed to 365‐nm light (i‐line), post‐exposure baked at 160°C for 5 min, and developed with an aqueous solution of 2.38 wt% tetramethylammonium hydroxide and iso‐propanol. A clear negative 8‐μm features pattern was obtained by contact‐printing and converted into the PI pattern upon heating at 250°C, confirming by scanning electron microscopy and infrared spectroscopy.

Photosensitive polyimides (PSPIs) have been widely used in the buffer coating layer and insulation layer due to their excellent thermal and mechanical stability. In this work, a series of negative‐type PSPIs based on poly(amic acid) (PAA) and a photobase generator (PBG) have been developed. Two diamines of 4,4′‐oxydianiline (ODA), 3,3′‐diaminodiphenyl sulfone (SDA), and four dianhydrides of pyromellitic dianhydride (PMDA), 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA), 4,4′‐oxydiphthalic anhydride (ODPA) and cyclobutene‐1,2,3,4‐tetracarboxylic dianhydride (CBDA) are copolymerized to PAA through polyaddition, and the PAA is further thermally imidized to polyimide (PI). Through scrutinizing the structure–sensitivity relationship of these PIs, we find that the rigidity and transparency of the PAA/PI backbone play an important role in the sensitivity and contrast of PSPI. Accordingly, PSPI (SDA‐ODPA), possessing high optical transparency and a low rigidity represented by the low glass transition point, is capable of providing good photosensitivity of 30 mJ/cm2, a high contrast of 2.46, and an excellent pattern resolution of 4 μm after optimizing the prebaking (100°C for 5 min), exposure dose (380 mJ/cm2), post‐exposure baking (130°C for 7 min), and development parameters. This work provides the concept of structural design for negative‐type PSPI in the microelectronic application.

We have developed the new process about PI Poly Imide: Liquid crystal alignment layer of TFT LCD rework with photo‐spacer and/or protrusion and/or resin black matrix for mass production using new chemical & EPD technology. In case of previous PI rework using O2 / SF6, it is seldom possible to remove selectively PI layer without a little damage to photo‐spacer and/or protrusion and/or resin BM including device characteristics such as I‐V curve of TFT and CIE color coordinates. But the present O2 / N2 chemical let the PI layer rework be embodied with a little damage to the photo‐spacer and/or protrusion and/or resin Black Matrix replaced for previous Cr metal BM. Therefore, it is possible for TFT LCD makers to cut‐down drastically the failure‐cost in case of using photo‐spacer narrow & constant cell gap and/or protrusion Vertical Alignment mode‐multi vertical alignment for wide viewing angle and/or resin BM for the 5th generation mother glass size TFT‐LCD.