Ultraviolet (UV) photonics-based device and equipment have various applications in sterilization, military covert communication, medical treatment, nanofabrication, gem identification and so on. The traditional constituent UV components are bulky, inefficient, expensive and easily aging under UV radiation. An all-dielectric metasurface offers a promising way to control the amplitude, polarization and phase of light by engineering the size, shape and distribution of its constituent elements. However, UV components based on all-dielectric metasurfaces are difficult to be realized, due to significant absorption loss for most dielectric materials at the UV region. Here we demonstrate the design of a UV metalens, composed of high-aspect-ratio aluminum nitride nanorods. The in-plane on-axis, off-axis and out-of-plane focusing characteristics have been investigated at representative UVA (375 nm), UVB (308 nm) and UVC (244 nm) wavelengths, respectively. Furthermore, we design UV router for mono-wavelength and multiple wavelengths, that is, guiding UV light to designated different spatial positions. Our work is promising for the development of UV photonic devices and would facilitate the integration and miniaturization of the UV nanophotonics.

Falls are a leading cause of morbidity and mortality in the older population. 1 Falls not only have a negative impact on the quality of life but are also one of the major predictors of placement in institutional care. 2 Approximately one out of three adults over the age of 65, and one out of two over the age of 80, fall annually. 3 Epidemiologic

All-dielectric metasurfaces offer a promising way to control amplitude, polarization, and phase of light. However, ultraviolet (UV) component metasurfaces are rarely reported due to significant absorption loss for most dielectric materials and the required smaller footprint or feature size. Here, we demonstrate broadband UV focusing and routing in both transmission and reflection modes in simulations by adopting aluminum nitride (AlN) with ultrawide bandgap and a waveplate metasurface structure. As for experiments, the on-axis, off-axis focusing characteristics in transmission mode have been investigated at representative UVA (375 nm) wavelength for the first time, to the best of our knowledge. Furthermore, we fabricated a UV transmission router for monowavelength, guiding UV light to the designated different spatial positions of the same or different focal planes. Our work is meaningful for the development of UV photonics components and devices and would facilitate the integration and miniaturization of UV nanophotonics.

Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga 2 O 3 (a-Ga 2 O 3 ) films are deposited by a simple radio frequency magnetron sputtering at different deposition temperatures. Fully transparent devices on a quartz substrate are fabricated with high responsivity, wide detection range and good repeatability. With the increase of Ga 2 O 3 deposited temperature, the concentration of oxygen vacancy increases accordingly, leading to a wide detection range from 250 to 325 nm and high responsivity (138 A W −1 at 5 V bias). The underlying mechanism has been discussed and analyzed. Our results should advance the application of a-Ga 2 O 3 -based ultraviolet photodetectors and other relevant devices.

Conventional metal–semiconductor–metal (MSM) ultraviolet (UV) detectors have the disadvantage of limited adjustable structural parameters, finite electrical field, and long carrier path. In this Letter, we demonstrate a three-dimensional (3D) MSM structural AlN-based deep-UV (DUV) detector, fabricated through simple trench etching and metal deposition, while flip bonding to the silicon substrate forms a flip-chip 3D-MSM (FC-3DMSM) device. 3D-MSM devices exhibit improved responsiveness and response speed, compared with conventional MSM devices. Time-dependent photoresponse of all devices is also investigated here. The enhanced performance of the 3D-MSM device is to be attributed to the intensified electrical field from the 3D metal electrode configuration and the inhibition of the carrier vertical transport, which unambiguously increases the carrier collection efficiency and migration speed, and thus the responsivity and speed as well. This work should advance the design and fabrication of AlN-based DUV detectors.