Influence of deposition temperature on amorphous Ga<sub>2</sub>O<sub>3</sub> solar-blind ultraviolet photodetector

Zhu, Wenhui; Xiong, Lingxing; Si, Jianxiao; Hu, Zhengyan; Gao, Xiang; Long, Linyun; Li, Tao; Wan, Rongqiao; Zhang, Lei; Wang, Liancheng

doi:10.1088/1361-6641/ab6ac1

Cited by 31 publications

(8 citation statements)

References 37 publications

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“…Our previous work illustrates that the recombination of electrons and holes leads to the fast process, while the slow-response component is from the carrier trapping/releasing at the Ga 2 O 3 /Ni interface. [31] Above experiment results indicate that the Ga 2 O 3 -based photodetector realized the fast and broadband UV light detection. Figure 2a shows the test diagram of Ni/p-NiO/n-ZnO/Ni memristor, and the positive current direction is from p-NiO to n-ZnO side in the following electrical measurements.…”

Section: Resultsmentioning

confidence: 76%

Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation

Xiao

et al. 2020

Adv Elect Materials

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Detection and storage of different light information using electronic devices are important to emulate image information learning and memory functions like the human visual system. In this work, the controllable light‐tunable synaptic memory behaviors are demonstrated utilizing photodetector in series with memristor (composite memristor). In other words, the composite memristor has the detection‐storage function to different light information, realizing visual memory simulation. Herein, a new synaptic device with inherent learning and memory functions is realized based on a pn heterostructure memristor. A depletion‐region width modulation model is proposed to explain the memory characteristics. Several essential synaptic functions are imitated. Further, the visual memory array system is built to accomplish the detection and memory processes of patterned light distribution. Importantly, different light information induces different pattern memory characteristics like human eyes. This composite memristor provides a new idea for wider waveband, greater detection range, and more realistic multifunctional electronic eyes.

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Section: Resultsmentioning

confidence: 76%

Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation

Xiao

et al. 2020

Adv Elect Materials

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“…[ 36 ] Zhu et al demonstrated solar‐blind UV PDs based on a‐GaO x thin films prepared at different T s (RT‐500 °C) and found that photodetectors using the 500 °C deposited thin films possessed the best performance. [ 40 ] Battu et al also found that gallium oxide films deposited at T s = RT‐400 °C were amorphous and the amorphous‐to‐crystalline transformation occurred at T s = 500 °C. [ 54 ] All of the aforementioned results indicate that T s can greatly affect not only the material properties but also the device performance.…”

Section: Preparation Methods Of A‐gaoxmentioning

confidence: 99%

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

Liang

Han

2020

Physica Status Solidi (a)

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Deep ultraviolet (UV) photodetectors have wide applications both in civil and military fields. Many materials have been explored to realize deep UV photodetection. Amorphous gallium oxide (a‐GaOx), as a member of transparent amorphous oxide semiconductors (TAOSs), has attracted a great deal of attention due to its ultrawide bandgap and scalable synthesis at room temperature. Plenty of researches have been focused on this topic in recent years. Herein, the latest progresses in the preparation methods of a‐GaOx using radio‐frequency sputtering, pulsed laser deposition, atomic layer deposition, and other deposition techniques are summarized. Dependence of the stoichiometry, crystallinity, optical, electrical, and morphological properties on different preparation parameters and doping/alloying elements is tentatively discussed, as well as those deep UV photodetectors based on a‐GaOx and related thin films. Finally, a short summary with further possible investigations is provided for a better understanding and development of a‐GaOx materials and photodetectors.

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“…The substrate temperature during sputtering is gradually increased from room temperature to 700 • C. As shown in XRD patterns in Fig. 4, when the substrate temperature was at 400 • C and below, the resulting Ga 2 O 3 films behave as amorphous, while they stabilize as β -phase nanocrystals after that the substrate temperature reaches 500 • C. Zhu et al [36] investigated the effect of deposition temperature during magnetron sputtering on the performance of a-Ga 2 O 3 films and photodetectors, concluding that as the deposition temperature increases, roughness of the film decreases and thickness increases; meanwhile, the concentration of oxygen vacancy in a-Ga 2 O 3 increases correspondingly, which results in a higher responsivity.…”

Section: Magnetron Sputteringmentioning

confidence: 99%

The growth and expansive applications of amorphous Ga₂O₃

Yang

Shu

et al. 2023

Chinese Phys. B

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As a promising ultra-wide bandgap semiconductor material, gallium oxide (Ga2O3) is attracting an extensive attention of researchers due to its feasible growth process, appropriate bandgap of 4.4-5.3 eV allowing for deep-ultraviolet (deep-UV) detection, good physical and chemical stability, high breakdown field strength and electron mobility, etc. Different from the strict processes for controllable crystalline Ga2O3 (usually refer to stable monoclinic β-Ga2O3), amorphous Ga2O3 (a-Ga2O3) film can be prepared uniformly at low temperature on a large-area deposition substrate, suggesting great advantages such as low manufacturing cost and excellent flexibility, dispensing with high-temperature and high vacuum techniques. Thus, a-Ga2O3 extremely facilitates important applications in various applied fields. Therefore, in this concise review, we summarized several major deposition methods for a-Ga2O3 films, of which the characteristics were discussed. Additionally, potential methods to optimize the film properties were proposed by right of the inspiration from some recent studies. Subsequently, the applications of a-Ga2O3 thin films, e.g., in photodetectors, resistive random access memories (RRAMs) and gas sensors, were represented with a fruitful discussion of their structures and operating mechanisms.

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Influence of deposition temperature on amorphous Ga₂O₃ solar-blind ultraviolet photodetector

Cited by 31 publications

References 37 publications

Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation

Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

The growth and expansive applications of amorphous Ga₂O₃

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Influence of deposition temperature on amorphous Ga2O3 solar-blind ultraviolet photodetector

Cited by 31 publications

References 37 publications

Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation

Building Light Stimulated Synaptic Memory Devices for Visual Memory Simulation

Recent Progress of Deep Ultraviolet Photodetectors using Amorphous Gallium Oxide Thin Films

The growth and expansive applications of amorphous Ga2O3

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Product

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Influence of deposition temperature on amorphous Ga₂O₃ solar-blind ultraviolet photodetector

The growth and expansive applications of amorphous Ga₂O₃