The tight process window of advanced lithography in the semiconductor industry is further challenged by the growing contribution of photo-mask related CD variations [1]. In previous technology generations, global measurement and global correction were sufficient to compensate for critical dimension uniformity (CDU) variations deriving from various sources. However, in the low K 1 regime for 45nm nodes and below, cross-coupled effects such as Mask Error Enhancement Factor (MEEF) and mask CDU can easily consume the overall CD budget related to lithographic process steps (see table 3).ASML's DoseMapper was designed to correct system (e.g. scanner, track) and non-system (e.g. mask) related errors [2] controlled by an Automated Process Control (APC) system. It was introduced as a method for correcting intra-field and inter-field variations, relying on feedback from printed wafer based metrology. Here we propose using AMAT's IntenCD TM map for supplying dense CDU measurement results from the reticle as a feed-forward input to DoseMapper. The IntenCD TM application characterizes CD uniformity of 'features of interest' across the mask in the form of a dense map with high accuracy and throughput.The case studies presented in this paper are the result of collaboration between AMAT and ASML to demonstrate the benefit of feeding IntenCD output into DoseMapper CD analyzer which translates the mask CD map into a scanner dose recipe.The integrated solution can be implemented in manufacturing factories to shorten turnaround time and improve the exposure process window. It can be used to compensate for CDU effects due to mask production as well as contributions due to life time deterioration.

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EUV lithography is regarded as the leading technology solution for the post-ArF era. Significant progress was made in recent years in closing the gaps related to scanner technology. This progress rendered EUV mask defectivity and related infrastructure as the primary risk for EUV lithography.The smallness of mask features, the novel defectivity mechanisms associated with the multilayer reflecting coating, and the stringent constraints on both multilayer and pattern imposed by the EUV wavelength -present a major challenge to current inspection technology, which constitutes a predominant gap to EUVL production-worthiness.Here we present results from an evaluation of a DUV mask inspection system and e-beam mask inspection technology on EUV masks. On this 193nm DUV system, we studied sensitivity and contrast enhancements by resolution enhancement techniques. We studied both pattern and blank inspection. Next, we studied image formation and performance of e-beam mask inspection technology for patterned mask defects. We discuss the advantages and roadmap of DUV and EBI mask inspection solutions for blank and patterned masks.