An IntenCD map of a reticle as a feed-forward input to DoseMapper

Yishai, Michael Ben; Finders, Jo; Kazinczi, Robert; Bleeker, Arno J.; Luehrmann, Paul Frank; Janssen, Ingrid Minaert; Duray, Frank; Shoval, Lior; Couderc, Christophe; Piech, Rich; Hillel, Noam; Englard, Ilan

doi:10.1117/12.793124

Cited by 8 publications

(4 citation statements)

References 3 publications

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“…These abilities are essential for advanced mask qualification applications. But additionally, they open new horizons to fuller integration of mask inspection and qualification in the development and practice of the lithographic cycle, as they allow, for example, to synergistically incorporate and correct for the mask contribution to CD variation [13], and verify lithographic process window. This synergy is in accord with the holistic approach underlying SMO, and is likely to be an enabler for the deployment and advancement of this new technology.…”

Section: Discussionmentioning

confidence: 99%

Aerial imaging for source mask optimization: mask and illumination qualification

et al. 2009

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As the semiconductor industry moved to 4X technology nodes and below, low-k 1 ArF lithography approached the theoretical limits of single patterning resolution, a regime typically plagued by marginally small process windows. In order to widen the process window bottleneck, projection lithography must fully and synergistically employ all available degrees of freedom. The holistic lithography source mask optimization (SMO) methodology aims to increase the overall litho performance and achieve a robust process window for the most challenging patterns by balancing between the mask and illumination source design influences. The typical complexity of both mask and illumination source that results from a generic SMO process exceeds the current norm in the lithographic industry. In particular, the SMO literature reports on masks that fully operate as diffractive optical elements, with features that have little resemblance to the final wafer-level pattern. Additionally, SMO illumination sources are characterized by parametric or pixelated shapes and a wide range of transmission values. As a consequence of the new mask and source designs, qualifying the mask for printing and non-printing defects and accurate assessment of critical dimensions becomes one of the main mask inspection challenges. The aerial imaging technologies of Applied Material's Aera2™ mask inspection tool provide enabling solutions by separating out only the defects that matter and accurately measures aerial imaging critical dimensions. This paper presents the latest numerical and experimental SMO mask qualifications research results performed at Applied Materials with a mask containing two-dimensional DRAM production structures.

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Section: Discussionmentioning

confidence: 99%

Aerial imaging for source mask optimization: mask and illumination qualification

et al. 2009

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“…Assuming advanced algorithms (such as IntenCD TM , c.f. [11]) are applied to extract CD from aerial images, an entire mask can be analyzed on the timescale of an hour. Clearly this can be significantly reduced provided a smart inspection plan is also applied.…”

Section: Discussionmentioning

confidence: 99%

Aerial imaging qualification and metrology for source mask optimization

et al. 2010

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As the semiconductor industry moves to 3X technology nodes and below, holistic lithography source mask optimization (SMO) methodology targets an increase in the overall litho performance with improved process windows. The typical complexity of both mask and illumination source exceeds what the lithographic industry has been accustomed to, and presents a novel challenge to mask qualification and metrology. In this paper we demonstrate the latest in aerial imaging technologies of Applied Material's Aera2 TM mask inspection tool. The aerial imaging capability opens the door to a wide variety of metrological measurements analysis at aerial level and provides enabling solutions for mask and scanner qualifications. In particular, we demonstrate core and periphery DRAM pattern process window assessment and MEEF measurements, performed on an advanced test mask.

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“…IntenCD has been explored extensively [4] with conclusive findings demonstrating its high correlation (R 2 = 0.964) between mask and wafer measurements (see Figure 4) [2]. The combination of aerial imaging, high data-rate and closed loop controlled illumination allow for the creation of accurate, high-precision mask-based CD uniformity maps with full mask coverage in about one hour.…”

Section: Figurementioning

confidence: 97%

Scanner qualification with IntenCD based reticle error correction

et al. 2010

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Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the cycle time for pre and post production-start activities. If done effectively, the matrices of base line performance established during the SAT are used as a reference for scanner performance and fleet matching monitoring and maintenance in the fab environment. Key elements which can influence the cycle time of the SAT, FAT and maintenance cycles are the imaging, process and mask characterizations involved with those cycles. Discrete mask measurement techniques are currently in use to create across-mask CDU maps. By subtracting these maps from their final wafer measurement CDU map counterparts, it is possible to assess the real scanner induced printed errors within certain limitations. The current discrete measurement methods are time consuming and some techniques also overlook mask based effects other than line width variations, such as transmission and phase variations, all of which influence the final printed CD variability. Applied Materials Aera2™ mask inspection tool with IntenCD™ technology can scan the mask at high speed, offer full mask coverage and accurate assessment of all masks induced source of errors simultaneously, making it beneficial for scanner qualifications and performance monitoring. In this paper we report on a study that was done to improve a scanner introduction and qualification process using the IntenCD application to map the mask induced CD non uniformity. We will present the results of six scanners in production and discuss the benefits of the new method.

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An IntenCD map of a reticle as a feed-forward input to DoseMapper

Cited by 8 publications

References 3 publications

Aerial imaging for source mask optimization: mask and illumination qualification

Aerial imaging for source mask optimization: mask and illumination qualification

Aerial imaging qualification and metrology for source mask optimization

Scanner qualification with IntenCD based reticle error correction

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