2009
DOI: 10.1117/12.832724
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Aerial imaging for source mask optimization: mask and illumination qualification

Abstract: As the semiconductor industry moved to 4X technology nodes and below, low-k 1 ArF lithography approached the theoretical limits of single patterning resolution, a regime typically plagued by marginally small process windows. In order to widen the process window bottleneck, projection lithography must fully and synergistically employ all available degrees of freedom. The holistic lithography source mask optimization (SMO) methodology aims to increase the overall litho performance and achieve a robust process wi… Show more

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Cited by 2 publications
(8 citation statements)
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“…And we demonstrated experimentally that mask qualification tasks such as full-mask scale CDU measurement and process window measurement can be accomplished successfully using the aerial imaging capabilities of the Aera2 TM platform -Applied Materials' aerial imaging mask inspection tool. The current paper complements [6] in several important respects. It considers (in §3.a) a comparison of process windows for a DRAM-like 2D, low-k 1 pattern obtained under two implementations of a "freeform" exposure condition (EC) characteristic of SMO.…”
Section: Introductionmentioning
confidence: 73%
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“…And we demonstrated experimentally that mask qualification tasks such as full-mask scale CDU measurement and process window measurement can be accomplished successfully using the aerial imaging capabilities of the Aera2 TM platform -Applied Materials' aerial imaging mask inspection tool. The current paper complements [6] in several important respects. It considers (in §3.a) a comparison of process windows for a DRAM-like 2D, low-k 1 pattern obtained under two implementations of a "freeform" exposure condition (EC) characteristic of SMO.…”
Section: Introductionmentioning
confidence: 73%
“…This is in accord with previous indications (c.f. [6]) that relative CD measurements are not significantly affected by the specific detail of SMO implementation on Aera2 (in [6] we considered CDU). Also notice that the PW analysis software introduces some degree of overfitting.…”
Section: Process Window Assessment Of a 2d Dram Patternmentioning
confidence: 99%
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