Aerial imaging qualification and metrology for source mask optimization

Sagiv, Amir; Finders, Jo; Kazinczi, Robert; Engelen, André; Duray, Frank; Minnaert-Janssen, Ingrid; Mangan, Shmoolik; Kasimov, Dror; Englard, Ilan

doi:10.1117/12.848376

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…Recent efforts in computation have introduced so-called "wafer plane" inspection, [96][97][98][99][100] which accounts for some of the recent improvements. Recent efforts in computation have introduced so-called "wafer plane" inspection, [96][97][98][99][100] which accounts for some of the recent improvements.…”

Section: Mask Fabricationmentioning

confidence: 99%

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

Melville¹,

Rosenbluth²,

Waechter³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Articles you may be interested inAnalysis and optimization approaches for wide-viewing-angle λ/4 plate in polarimetry for immersion lithographyIn the recent past, scaling of semiconductor fabrication systems has been dominated by wavelength and numerical aperture modifications. This is now no longer the case for 193-nm immersion projection lithography (193i) systems as there are no technical paths for continued benefit from the in these areas. Instead, a range of techniques including patterning processes and system optimization are being used to push the limits of the system. This paper will review the elements that are now driving scaling for a system of fixed wavelength and numerical aperture.

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Section: Mask Fabricationmentioning

confidence: 99%

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

Melville¹,

Rosenbluth²,

Waechter³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…The Aera aerial inspection tools are based on the principle of inspecting the mask at a scanner resolution, by using both the scanner illumination shaping and the scanner NA at the mask plane. In order to support all possible scanner illumination and collection modes, the Aera tools are designed with a built-in flexible illumination shaping unit, which allows emulating any possible illumination shape and collection NA (for an extreme SMO case, see [7]). …”

Section: Introductionmentioning

confidence: 99%

Results from a novel EUV mask inspection by 193nm DUV system

et al. 2010

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The semiconductor industry recently concluded that EUV lithography is the most promising candidate to replace ArF for the 22nm half-pitch node and beyond. Significant progress was made in EUV scanner and source technology and EUV resists have achieved acceptable performance levels as well. But issues related to EUV mask inspection and defectivity remain for the most part unanswered. This gap positions EUV masks as the leading risk to the entire technology, and requires a robust solution during the introduction phase of EUVL. In this paper we present results from a EUV mask inspection system. We demonstrate optimal pattern image formation by using illumination shaping, and consider detection of various defect types that represent realistic mask defectivity scenarios. These results demonstrate that DUVbased patterned mask inspection tool can meet the requirements of the pre-production EUV phase, at 32nm half-pitch, and has adequate room to extend to production at the 22nm node.

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