The photosensitive organic passivation for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process steps can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been passivated by the plasma treatment and the devices exhibit lower leakage current than the conventional silicon nitride (SiN x ) passivation layer of BCE TFTs. The leakage currents between Indium-tin oxide (ITO) pixels and the TFT devices, as well as the thermal-humidity reliability tests have also been investigated in this paper.