One dimensional (1D)-two dimensional (2D) van der Waals (vdWs) mixed-dimensional heterostructures with advantages of atomically sharp interface, high quality and good compatibility have attracted tremendous attention in recent years. The...

The widespread application of photodetectors has triggered an urgent need for high-sensitivity and polarization-dependent photodetection. In this field, the two-dimensional (2D) tungsten disulfide (WS 2 ) exhibits intriguing optical and electronic properties, making it an attractive photosensitive material for optoelectronic applications. However, the lack of an effective built-in electric field and photoconductive gain mechanism in 2D WS 2 impedes its application in high-performance photodetectors. Herein, we propose a hybrid heterostructure photodetector that contains 1D Te and 2D WS 2 . In this device, 1D Te induces in-plane strain in 2D WS 2 , which regulates the electronic structures of local WS 2 and gives rise to type-II band alignment in the horizontal direction. Moreover, the vertical heterojunction built of 2D WS 2 and 1D Te introduces a high photoconductive gain. Benefiting from these two effects, the transfer of photogenerated carriers is optimized, and the proposed photodetector exhibits high sensitivity (photoresponsivity of ~27.7 A W −1 , detectivity of 9.5 × 10 12 Jones, and short rise/ decay time of 19.3/17.6 ms). In addition, anisotropic photodetection characteristics with a dichroic ratio up to 2.1 are achieved. This hybrid 1D/2D heterostructure overcomes the inherent limitations of each material and realizes novel properties, opening up a new avenue towards constructing multifunctional optoelectronic devices.

Monoelemental two-dimensional (2D) Tellurium (Te) has demonstrated excellent potential candidate for next-generation (opto)electronic devices due to its unique properties such as topological surface states, high carrier mobility, high light absorption...

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