We prepared oxynitrides with different interracial nitrogen concentration ([N~nt]) using RTP. Reoxidation kinetics of these oxynitrides was studied. It was found that reoxidation thickness strongly depends on the [N~nt]. The reoxidation kinetics can be used for the evaluation of [N~n,].

Fluorinated silicon dioxide films were deposited in a commercial plasma enhanced chemical vapor deposition reactor using tetra ethyl ortho silicate (TEOS), oxygen, and C2F6. The depositions were carried out using dual rf frequency power at low pressure, 500–750 mTorr. Film properties were investigated as a function of rf power, pressure, gas flows, and wafer temperature. Fluorine content, refractive index, stress, and deposition rate are among the film properties studied. Special attention was paid to the stability of these properties in air, in boiling water, and after subsequent annealing. The base line TEOS process is unusual in that high compressive stress values can be achieved, up to about 300 MPa. It was thought that this high initial stress would lead to improved stability at higher fluorine concentration. Film stress was found to be quite compressive, even at high fluorine concentration. Good film stability was observed for fluorine concentrations up to 10% (Si–F/Si–O peak ratio). Refractive indices as low as 1.40 were measured. This work demonstrates that a stable, production-quality, fluorinated oxide film can be deposited in this reactor.

A new technique for improving the diffusion barrier properties of thin, thermallyevaporated nickel, chromium and nichrome films on silicon is described. In this technique, known as “Rapid Thermal Annealing” (RTA), profound differences in the diffusion barrier properties of the films annealed in ammonia ambient at 550-750°C, in comparison to films annealed only in vacuum, were observed. The films annealed in ammonia retained their integrity while the films annealed in vacuum showed diffusion of the silicon into the metal overlayer throughout the entire thickness of the metal in some cases. The film sheet resistance increase for the latter was consistent with the formation of the metal silicide. The possibility of extending this technique to electroplated films used in integrated and hybrid device fabrication is being studied.

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A low temperature (180 °C) and pressure (⩽750 mTorr) tetraethylorthosilicate (TEOS) oxide deposition process was developed and characterized in a commercially available plasma enhanced chemical vapor deposition reactor. The reactor uses a dual frequency, capacitively coupled, parallel plate electrode design, which employs multistation sequential deposition to enhance throughput and uniformity. Deposition rate, within wafer film thickness uniformity, and film stress were characterized as a function of process pressure, gas composition, rf power, and temperature. Production quality oxide films were deposited using low TEOS flow rate (45 sccm), high oxygen flow rate (4000 sccm), and low pressure (500 mTorr). Deposition rate increased linearly with TEOS flow rate and decreases with oxygen flow rate. Deposition rate was weakly dependent on high frequency power and independent of pressure in this low pressure regime. Film thickness uniformity across a 200 mm wafer improved with decreasing TEOS flow rate and pressure. Uniformity was a weak function of oxygen flow rate and high frequency power. Film stress became more compressive with decreasing TEOS flow rate and was a weak function of oxygen flow rate, high and low frequency power, and pressure. A high quality TEOS oxide was deposited in this new processing regime, suitable for integrated circuit applications.