We report the current gain decreases with adding the multiple-quantum-well (MQW) in the base of the heterojunction bipolar light-emitting transistors (HBLETs). The simulation result is consistent with experimental I-V characteristics for single-quantum-well (1QW) HBLET.
The study investigates the DC characteristics and the optical output from room temperature to 358K. The current gain of the LET with triple QWs improves 146.62% which is desired for high resolution temperature sensor.
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