Molybdenum disulfide (MoS2) synthesized by Chemical Vapor Deposition (CVD) is commonly accompanied by some intermediate products in the form of MoO3-x, and causing MoS2-MoO3-x hybrids with diverse structures. In this...

The platform for supporting two-dimensional (2D) materials such as graphene has a critical influence on the electronic properties of the materials it supports. Here we report on the filtered cathodic vacuum arc deposition (FCVAD) of atomically flat diamond-like carbon (DLC) films with varied C sp 3 /sp 2 content ratio by modulating the parameters of substrate bias voltage, then used as a dielectric platform for supporting graphene. By doing this, an all-carbon DLC−graphene heterostructure would be formed. Through characterizing this heterostructure and constructing graphene field effect transistors (FETs) on DLC, it was shown that graphene on DLC platforms had less doping from the substrate and improved FET carrier mobility compared with that of graphene on SiO 2 /Si substrate. Moreover, the graphene on different DLC platforms exhibited an increased FET mobility (up to ∼7032 and 5558 cm −2 V −1 s −1 for hole and electron, respectively) with the increase of C sp 3 /sp 2 bond fraction in DLC which could be tuned by the negative bias voltage applied to the deposited substrates in the FCVAD synthesis of DLC here.

Nitrogen-doped graphene (NG) was synthesized through the chemical vapor deposition (CVD) of graphene on Cu substrates, which were pre-implanted with N ions by the ion implantation method. The pre-implanted N ions in the Cu substrate could dope graphene by the substitution of C atoms during the CVD growth of graphene, forming NG. Based on this, NG’s long-term protection properties for Cu were evaluated by ambient exposure for a corrosion test. The results showed that NG can obviously reduce the natural oxidation of Cu in the long-term exposure compared with the case of pristine graphene (PG) coated on Cu. Moreover, with the increase in pre-implanted N dose, the formed NG’s long-term protection for Cu improved. This indicates that the modification of graphene by N doping is an effective way to improve the corrosion resistance of the PG coating owing to the reduction in its conductivity, which would inhibit galvanic corrosion by cutting off electron transport across the interface in their long-term protection. These findings provide insight into corrosion mechanisms of the graphene coating and correlate with its conductive nature based on heteroatoms doping, which is a potential route for improving the corrosion resistance of graphene as an effective barrier coating for metals.

The controllable fabrication of two-dimensional transition metal dichalcogenides (2D TMDs) and deep understanding the corresponding processes mechanisms are of fundamental importance for their further applications. In this work, a molten-droplet-driven...