Using the extended Hückel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in A II VI , A III B V , and A IV B VI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literature experimental and ab initio theoretical data is established. This testifies to the adequacy of the applied methods and to a possibility of using them for the estimation of the defect concentration in semiconductors. K e y w o r d s: semiconductors, point defects, defect formation energy.

No abstract

The results of the researching of thermoelectric properties of samples, which are obtained by compressing mechanical mixtures of microdisperse powders PdTe and CdTe, are presented. It was found that the using of cadmium for telluride as an additional component to the lead telluride contributes to a decrease in the coefficient of thermal conductivity of the materials of the studied system, which can be promising for the creation of thermoelectric converters based on them.