Semiempirical Energies of Vacancy Formation in Semiconductors

Abstract

Using the extended Hückel method and the methods based on thermochemical, thermodynamic, and electrophysical data, the energies of vacancy formation in A II VI , A III B V , and A IV B VI semiconductor crystals have been determined. A correlation of the obtained values with one another and with the literature experimental and ab initio theoretical data is established. This testifies to the adequacy of the applied methods and to a possibility of using them for the estimation of the defect concentration in semiconductors. K e y w o r d s: semiconductors, point defects, defect formation energy.

Оптичні властивості CdTe, легованого Ca

“…On the curves given, they are indicated by the corresponding symbols Eg and Eex. Their presence confirms the effect of "purification" of the starting material as a result of doping with an isovalent impurity, which is determined by the features of its interaction with atoms of matter [6,17].…”