No abstract

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400[Formula: see text]C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O[Formula: see text] and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Beginning with LaFeO3, a prominent perovskite-structured material used in the field of gas sensing, various perovskite-structured materials were prepared using sol–gel technique. The composition was systematically modified by replacing La with Sm and Gd, or Fe with Cr, Mn, Co, and Ni. The materials synthesized are comparable in grain size and morphology. DC resistance measurements performed on gas sensors reveal Fe-based compounds solely demonstrated effective sensing performance of acetylene and ethylene. Operando diffuse reflectance infrared Fourier transform spectroscopy shows the sensing mechanism is dependent on semiconductor properties of such materials, and that surface reactivity plays a key role in the sensing response. The replacement of A-site with various lanthanoid elements conserves surface reactivity of AFeO3, while changes at the B-site of LaBO3 lead to alterations in sensor surface chemistry.