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In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400[Formula: see text]C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O[Formula: see text] and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

A low cost, CMOS-compatible, and easily implementable method is presented for the synthesis of a thin film thermometer material for microbolometer applications. The thin film thermometer material was prepared by sputter depositing 11 alternative layers of vanadium pentoxide and vanadium followed by post-deposition annealing of the deposited structure in O 2 atmosphere at 300°C. The synthesised thin film thermometers showed a maximum temperature coefficient of resistance of −2.92%/ o C and a minimum resistivity 0.161 Ω cm. for Science and Technology under the nano-photonics project. National science, technology and innovation plan (NSTIP) grant no. 34-989.