Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

Zia, Muhammad Fakhar; Abdel‐Rahman, M.; Alduraibi, M.; Ilahi, Bouraoui; Alasaad, Amr

doi:10.1049/el.2016.0017

Cited by 14 publications

(11 citation statements)

References 9 publications

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“…This was done here since our focus in this work was to present a proof-of-concept prototype and to introduce this new dual-polarized, IR antenna architecture. However, in the future, the performance of a device of this type can be enhanced by using bolometers with higher temperature coefficient of resistance, such as vanadium oxide 42 and by thermally isolating the bolometers from the substrate of the slot antenna using micromachining techniques 39 . Additionally, lower loss materials may also be used as the antenna substrate instead of the silicon dioxide used here.…”

Section: Discussionmentioning

confidence: 99%

A Wide Dynamic Range Polarization Sensing Long Wave Infrared Detector

Mohammadi

Behdad

2017

Sci Rep

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We present the design, fabrication, and characterization of an infrared (IR) polarization sensing detector with a wide dynamic range and sub-wavelength dimensions. The detector consists of two orthogonal slot antennas, each loaded with two microbolometers at its edges. The polarization of the incoming IR radiation is detected by comparing the received power levels in the bolometer pairs corresponding to each slot antenna. The IR radiation is sensed by applying a dc bias voltage to each antenna and measuring the changes in the dc current caused by the change of the bolometer resistance as they absorb the incoming IR radiation. In this design, the ratio of the absorbed power in the bolometers is a one to one function of the polarization of the incident wave. A prototype of this detector, designed to have maximum sensitivity at λ = 10.6 μm, was designed, fabricated, and characterized. The fabricated detector has an area of 0.7λ × 0.7λ, where λ is the free-space wavelength. The polarization sensing response is characterized under different angles of incidence. The measurement results show that the device has a dynamic range of 24 dB between two orthogonal orientations of EM wave polarization for incidence angles in the range of ±20° from boresight.

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Section: Discussionmentioning

confidence: 99%

A Wide Dynamic Range Polarization Sensing Long Wave Infrared Detector

Mohammadi

Behdad

2017

Sci Rep

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“…High TCRs are desirable to be accompanied with optimized resistivities suitable for the microbolometer resistance to be matchable to accompanying ROICs and coupled antennas (in antenna-coupled microbolometer configurations). The ability to tune the TCR/resistivity properties of the resistive thermometer layers is highlighted in this work through employing the multi-layer synthesis technique [13,14,15,16,17,18] toward developing V x O y resistive thermometer thin films.…”

Section: Introductionmentioning

confidence: 99%

“…High TCRs (typically between −2 and −5%/K) are achievable using semiconducting materials such as vanadium oxide [13,14,15,16,17,18,19,20,21,22], amorphous silicon [22,23,24,25,26], and other materials [26,27,28,29,30]. The high TCRs are accompanied with resistivity values (typically between 0.07 and 8000 Ω·cm) suitable for resistive thermometer layers in microbolometer configurations.…”

Section: Introductionmentioning

confidence: 99%

“…The multi-layer synthesis technique has been successful in realizing thermometer thin films with resistivities and TCRs suitable for microbolometer applications [13,14,15,16,17,18]. This synthesis technique relies on depositing cascaded alternating layers of a vanadium oxide (e.g., vanadium sesquioxide (V 2 O 3 ) [18] or vanadium pentoxide (V 2 O 5 ) [13,14,15,16,17]) and vanadium (V) metal and then annealing the structure to allow for intermixing between the vanadium oxide layers and the V metal layers, thus forming a mixed phase vanadium oxide, V x O y , [15] with desirable TCR and resistivity values [13,14,15,16,17,18]. The multi-layer synthesis technique allows one to tune the TCR and resistivity values of the thin films by changing the ratio between the thicknesses of the vanadium oxide layers and V metal layers and by varying the annealing conditions.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we apply the multi-layer synthesis technique toward fabricating resistive thermometer thin films with TCR and resistivity values specifically suitable for antenna-coupled microbolometer applications. To this end and by considering the findings of previous works [13,14,15,16,17,18], the vanadium/(vanadium oxide) ratio was increased in the deposited thin film, aiming for both a reduction in the resistivity of the synthesized thermometer thin film and for a minimal decrease in the TCR. In this work, multi-layer structures consisting of 5-nm-thick alternating multi-layers of V 2 O 5 and V are sputter-deposited and further ex situ annealed for 30 min and 40 min in O 2 and N 2 atmospheres.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Temperature-Dependent Resistive Properties of Vanadium Pentoxide/Vanadium Multi-Layer Thin Films for Microbolometer & Antenna-Coupled Microbolometer Applications

Abdel‐Rahman

Zia

Alduraibi

2019

Sensors

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In this study, vanadium oxide (VxOy) semiconducting resistive thermometer thin films were developed, and their temperature-dependent resistive behavior was examined. Multilayers of 5-nm-thick vanadium pentoxide (V2O5) and 5-nm-thick vanadium (V) films were alternately sputter-deposited, at room temperature, to form 105-nm-thick VxOy films, which were post-deposition annealed at 300 °C in O2 and N2 atmospheres for 30 and 40 min. The synthesized VxOy thin films were then patterned into resistive thermometer structures, and their resistance versus temperature (R-T) characteristics were measured. Samples annealed in O2 achieved temperature coefficients of resistance (TCRs) of −3.0036 and −2.4964%/K at resistivity values of 0.01477 and 0.00819 Ω·cm, respectively. Samples annealed in N2 achieved TCRs of −3.18 and −1.1181%/K at resistivity values of 0.04718 and 0.002527 Ω·cm, respectively. The developed thermometer thin films had TCR/resistivity properties suitable for microbolometer and antenna-coupled microbolometer applications. The employed multilayer synthesis technique was shown to be effective in tuning the TCR/resistivity properties of the thin films by varying the annealing conditions.

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Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

ElGhonimy

Abdel‐Rahman

Hezam

et al. 2021

Physica Status Solidi (b)

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Herein, the prospect of using amorphous Si1–x Sn x alloys as alternative temperature‐sensing active materials in microbolometers is evaluated by studying their temperature‐dependent resistive properties along with their infrared optical properties. Si1–x Sn x thin films (200 nm thick), with varying Sn concentrations, are prepared at room temperature by cosputtering from Si and Sn targets using simultaneous radio frequency and DC magnetron sputter deposition. Low beam energy X‐ray microanalysis is used to estimate the atomic concentrations of the prepared films. Atomic force microscopy analysis shows an increase in the root‐mean‐square surface roughness of the prepared Si1–x Sn x thin films, with increasing Sn content. Sheet resistance versus temperature measurements are performed yielding temperature coefficients of resistance of 3.25, 2.65, and 1.72% K−1 at resistivity values of 116.18, 27.36, and 2.34 Ω cm for Sn concentrations of 35%, 44%, and 48%, respectively. Infrared ellipsometry measurements are performed to extract the optical properties of the Si1–x Sn x thin films and optical simulations confirm that a Fabry–Pérot cavity microbolometer configuration containing an Si1–x Sn x thin film can achieve high absorptance in the 8–12 μm band. This study shows that Si1–x Sn x alloys are a suitable, simple, and low‐cost replacement for thermometer layers used in uncooled infrared microbolometers.

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Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

Cited by 14 publications

References 9 publications

A Wide Dynamic Range Polarization Sensing Long Wave Infrared Detector

A Wide Dynamic Range Polarization Sensing Long Wave Infrared Detector

Temperature-Dependent Resistive Properties of Vanadium Pentoxide/Vanadium Multi-Layer Thin Films for Microbolometer & Antenna-Coupled Microbolometer Applications

Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers

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