Necessary Preceding Informations (Data)The purpose of the present review is to analyze the results of certain experiments envolving the interaction of electrons and phonons in n-Si. Since for the interpretation of such data the energy spectra of phonons and electrons as well as group-theoretical selection rules for their interactions are widely used, we shall first briefly discuss these topics.

No abstract

No abstract

The concentration of electrons and the decay time of carriers additionally excited from the donor states are measured in dependence on the electric field strength in n-Si in the temperature region of partial freezing out. From these data the parameters characterizing the processes of phonon assisted and impact ionization and recombination are determined. It is shown that a t not too low temperatures the Auger recombination and the impact ionization a t weak electric field strength are noticeable and are determined by the contribution of the highly excited states of the donors. The phonon assisted recombination is described by the improved model of the cascade process including intervalley scattering of the electrons.

The magnetoconductivity of n-Si at a strong but not quantizing magnetic field is presented for 77 OK. In contrast to weak magnetic fields a superlinearity of the current-voltage characteristics is obtained. This agrees with theoretical predictions of the inversion of the ratio of the mean carrier energies and repopulation of electrons between the valleys.