Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperatures

Asche, M.; Kostial, H.; Sarbey, O. G.

doi:10.1002/pssb.2220910217

Physica Status Solidi (b)

1979

DOI: 10.1002/pssb.2220910217

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Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperatures

M. Asche¹,

H. Kostial²,

O. G. Sarbey

Abstract: The concentration of electrons and the decay time of carriers additionally excited from the donor states are measured in dependence on the electric field strength in n-Si in the temperature region of partial freezing out. From these data the parameters characterizing the processes of phonon assisted and impact ionization and recombination are determined. It is shown that a t not too low temperatures the Auger recombination and the impact ionization a t weak electric field strength are noticeable and are determ… Show more

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Cited by 41 publications

(10 citation statements)

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“…Auger processes are likely to be more significant in relatively higher carrier concentration samples, although there is as yet no clear evidence for this mechanism. Koenig et al [7] and Asche et al [8] have used electrical pulse techniques to study Auger processes in germanium and silicon at low temperatures, although the choice of a group-IV semiconductor material for their investigations is not so convenient for comparison with the hydrogenic model. Furthermore, in both cases, very large electric fields were used for excitation and probing of the recombining electron population, and it is, therefore, doubtful if this population was in equilibrium.…”

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confidence: 99%

Time-Resolved Recombination Dynamics of Photoionized Hydrogenlike Impurities

Rikken

Wyder²,

Chamberlain

et al. 1988

Europhys. Lett.

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The dynamics of recombination of photoionized shallow impurities is investigated on a nanosecond time scale, by monitoring the photoconductive decay of high-purity n-InP illuminated with fast, high-power far-infrared pulses. The classical rate equation is found to break down due to the population and impact ionization of excited states. At higher carrier densities and bias electric fields Auger-like recombination is found to strongly affect the decay process.Recombination of electrons a t shallow impurities in semiconductors is the prototype of a general class of electron recombination processes at localized states, such as deep traps or surface states. In this letter we report the use of a novel time-resolved far-infrared (FIR) technique to probe shallow-impurity recombination in a 111-V semiconductor. This enables us to obtain, for the first time, clear evidence of the population of excited impurity states during recombination and direct insight into the mechanisms involved in the electron energy relaxation processes.The shallow donor in many 111-V semiconductors is known to be a good analogue of the hydrogen atom [l, 21. It is known that the shallow donors in indium phosphide (InP), which are predominantly silicon and sulphur, exhibit model hydrogenic behaviour. It is generally accepted [3] that carriers optically excited to higher bound impurity states are further thermally excited into continuum states (thereby giving rise to photoconduction), and that

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mentioning

confidence: 99%

Time-Resolved Recombination Dynamics of Photoionized Hydrogenlike Impurities

Rikken

Wyder²,

Chamberlain

et al. 1988

Europhys. Lett.

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“…In bipolar semiconductors, nonequilibrium charge carriers is a mechanism that generates nonlinearity in the density of the current [7]. Previous calculations have been addressed to nonlinearity caused by an impact ionization [5,8], carrier lifetime changes [9], intervalley redistributions of carriers [10].…”

mentioning

confidence: 99%

“…Previous calculations have been addressed to nonlinearity caused by an impact ionization [5,8], carrier lifetime changes [9], intervalley redistributions of carriers [10].…”

mentioning

confidence: 99%

Nonlinear charge transport in bipolar semiconductors due to electron heating

Molina-Valdovinos

Gurevich

2016

Physics Letters A

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It is known that when strong electric field is applied to a semiconductor sample, the current voltage characteristic deviates from the linear response. In this letter, we propose a new point of view of nonlinearity in semiconductors which is associated with the electron temperature dependence on the recombination rate. The heating of the charge carriers breaks the balance between generation and recombination, giving rise to nonequilibrium charge carriers concentration and nonlinearity.The study of nonlinear transport deals with physical processes that arise when a sufficiently strong electric field is applied to a semiconductor sample, so that the current deviates from the linear response.If we have a metal-semiconductor (Ohmic) contact, in an external electric field, the electrons move inside of a semiconductor changing the concentration of carriers in the volume (injection of majority carriers). The currentvoltage characteristic (CVC) changes from the linear to quadratic and then back to linear. This effect is known as Mott's law [1]. In the Schottky barrier [2,3], when the equilibrium concentration of charge carriers near the contact is less than the volume concentration, an applied external electric field causes a diode type CVC. Another mechanism that leads to nonlinearity is the minority carrier injection in p-n contact [4,5]. As a consequence of the Peltier and Thompson effect, a mechanism of nonlinearty arises, when an electric field is applied near the contact. We have heating or cooling which generates a nonlinear electrical current in the semiconductor [6]. All these mechanisms of nonlinearity of CVC are due to contacts.There are other mechanisms of nonlinearity due to the volume.In bipolar semiconductors, nonequilibrium charge carriers is a mechanism that generates nonlinearity in the density of the current [7]. Previous calculations have been addressed to nonlinearity caused by an impact ionization [5,8], carrier lifetime changes [9], intervalley redistributions of carriers [10].In semiconductors there are mechanisms of nonlinearity in the density of current associated with mobility (hot electrons). One of this mechanism is due to the effective mass that depends on the energy, m * = m * (E) [11]. Another mechanism is due to the dependence of the momentum relaxation time on energy [12][13][14].As a field increases, the average energy of the electrons and holes increases, too (hot carriers). Therefore * sergiom@fisica.uaz.edu.mx the system is out of equilibrium, i.e., when the effective temperature for electrons T n and holes T p are greater than the lattice temperature T ph . As a result, electrons and holes tend to occupy higher quantum states in the conduction and valence bands, respectively. The balance between thermal generation and recombination of electrons and holes is broken [12,15,16]. The dependence of the rate of recombination on the temperature of carriers generates a change in the carrier concentration [17]. So, the non equilibrium concentration for electrons (holes) is connected with th...

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“…Let's emphasize once again, that here we do not consider the explicit dependence of the capture factor on the magnitude of the electrical field applied, i.e. we do not take into account such processes as the change of the carrier life time in strong fields (see 8 ). By definition,…”

mentioning

confidence: 99%

“…Thus, as a rule, it was considered, that the nonlinearity of the CVC is related to the carrier mobility alteration because of the change of carrier mean energy. Some number of works was devoted to nonlinearity caused by impact ionization 6,7 , carrier lifetime change 8 , inter-valley redistribution of carriers 9 or by non-parabolic form of the carrier dispersion law 10,11 in strong fields. In single-valley semiconductors, neglecting such processes as an impact ionization and carrier lifetime change in strong fields, it is usually considered 1-5 that only the carriers, which already exist in bands, are subjected to heating, i.e.…”

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confidence: 99%

Forgotten mechanism of nonlinearity in the theory of hot electrons

Gurevich

Volovichev

1999

Phys. Rev. B

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Ionization of low donor levels and recombination of hot electrons in n‐Si at low temperatures

Cited by 41 publications

References 16 publications

Time-Resolved Recombination Dynamics of Photoionized Hydrogenlike Impurities

Time-Resolved Recombination Dynamics of Photoionized Hydrogenlike Impurities

Nonlinear charge transport in bipolar semiconductors due to electron heating

Forgotten mechanism of nonlinearity in the theory of hot electrons

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