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The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiationinduced deep-level recombination centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, before and after being irradiated with neutrons. Simulation predictions agree well with experiments. Limitations of the adopted model are discussed, with reference to simulation-based comparison with higher-order models.

ances, leakaae currents, etc.In this work, the application of numerical device simulation to the analysis of high resistivity silicon microstrip detectors is illustrated. The analysis of DC, AC and transient responses of a single-sided, Dc-coupled detector has been carried out, providing results in good agreement with experimental data. In particular, transient-mode simulation has been exploited to investigate the collection of charges generated by ionizing particles. To this purpose, an additional generation term has been incorporated into the transport equations; the motion of impact-generated carriers under the combined action of ohmic and diffusive forces is hence accounted for. Application to radiation tolerance studies is also introduced.In this paper, the application of numerical device simulation to the analysis of high-resistivity, single-sided silicon microstrip detectors is illustrated; besides carrying out the complete characterization of equivalent-circuit parameters, we present a novel approach to the simulation of sensors' active behavior, i.e., to the analysis of charge collection phenomena. This has been made possible by means of a suitably "customized" transient simulation technique. Details on the actual characteristics of the simulation tool are presented in sect. 2, with particular emphasis on the features introduced in order to model the charge-collection dynamics. .Simulation results are presented in Sect. 3: here, radiation influence over a couple of important detector-design parameters (namely, the depletion voltage and the strip capacitance) has been evaluated by properly adjusting the oxide charge and the effective doping concentration. Sect. 4 below is more specifically devoted to the analysis of the charge collection mechanisms: the timedomain sensor response to a particle crossing the detector is simulated, from which the spatial resolution is estimated.