The atomic layer deposition ͑ALD͒ of Al 2 O 3 using trimethylaluminum ͑TMA͒ as a metal precursor on an InSb substrate with or without surface pretreatments was investigated. It was found that both in situ TMA/Ar purging ͑half-ALD cycle͒ and ex situ CP4A ͑HNO 3 :HF:CH 3 COOH:H 2 O = 2:1:1:10͒ chemical etching can remove the native oxides on InSb before ALD of Al 2 O 3 , and lead to a native-oxides-free Al 2 O 3 /InSb structure. Characteristics of current density-voltage and capacitance-voltage were also investigated to evaluate the insulative and interface quality in a Pt/Al 2 O 3 /InSb metal-oxide-semiconductor structure.

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