Les niveaux profonds introduits par irradiation à température ambiante avec des électrons de 1 MeV dans des photodiodes au germanium p+n ont été étudiés à l'aide de transitoires de capacité. Deux pièges à électron

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Photoconductivity methods are used to investigate high-resistivity n-type and p-type silicon implanted with doses of ∼1014 B+/cm2 of 100 keV. Besides the photoconductivity band associated with the divacancy, a photoconductivity level at ∼0.4 eV is detected in the spectrum. This level anneals at ∼300°C; it has been associated with boron interstitial atoms in sites of trigonal symmetry for boron-doped silicon irradiated with electrons. The appearance of this level is not so clear in the case of the p-type silicon substrate where the substrate contribution to the photoconductivity is larger.