No abstract

An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25 C and 125 C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations.The Spice model also takes into account for the first time the parasitic thyristor effect allowing the dc and dynamic temperaturedependent latchup modeling of power modules as well as their temperature-dependent safe operating area.