2004
DOI: 10.1109/tia.2004.827456
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Advanced SPICE Modeling of Large Power IGBT Modules

Abstract: An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25 C and 125 C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations… Show more

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Cited by 27 publications
(1 citation statement)
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“…The mod experimental static characteristi power module (both for IGBT illustrates the list of extracted pa and diodes used for a 4.5kV module [8][9][10].…”
Section: Results Anmentioning
confidence: 99%
“…The mod experimental static characteristi power module (both for IGBT illustrates the list of extracted pa and diodes used for a 4.5kV module [8][9][10].…”
Section: Results Anmentioning
confidence: 99%