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A high power on-wafer measurement system based on the new microwave transition analyzer (MTA) HP 71500A has been developed for the complete characterization of the large signal behavior of transistors. One key feature of the MTA based measurement system is that during power sweeps the harmonic behavior, up to 40 GHz, can be measured. To improve the accuracy of power measurements the vector measurement capability of the MTA is also utilized to allow full vector calibration of the measurement system. In addition, this vector measurement feature allows both the input reflection and the transmission coefficients of a device under test (DUT) to be measured as a function of frequency and input power. The input and output voltage waveforms at the transistor terminals are also calculated from the measurement data. This improved capability is possible since the vector calibrated measurement system allows both the measurement of the fundamental and the higher harmonics with respect to magnitude and phase.

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An analysis technique has been developed that allows for the determination of the transistor dynamic IN characteristics (RFI-V) directly from CW large signal RF measurements. A key feature of this technique is that R is performed under RF operation conditions similar to those found in power amplifiers under CW RF drive conditions. Investigations have shown that these dynamic RF I-Vs are independent of initial DC bias conditions and RF drive level for the MODFET structures investigated in this paper. These dynamic RF I-Vs can be directly compared with DC IVs to allow for the investigation of phenomena's like dispersion, RF breakdown and thermal effects etc.. To demonstrate their potential capability in the area of non-linear modelling these RF Ws have been used for non-linear parameter extraction of a relatively simple large signal model. A good comparison between the simulated and measured large signal behavior even for the higher harmonies has been achieved