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We measured the energy distributions of negative ions during reactive sputtering of silicon in oxygen. Various oxygen containing negative ions are formed in the cathode sheath or directly at the sputter target, respectively. These negative ions are accelerated away from the cathode by the electrical field, and can be detected using a mass spectrometer facing the sputter magnetron. The origin of each ion can be determined from peak structures in the energy distribution. Additionally the flux of different negative ions provides information on poisoning of the target by oxide films.

We measured quasisimultaneously the energy distributions of positive ions at the powered rf and grounded electrode of a parallel plate 13.56 MHz discharge using an energy selective mass spectrometer. The resulting ion energy distributions reflect the discharge potential conditions expected from a capacitive plasma sheath model. By means of an externally supplied dc bias of the powered electrode we are able to influence the potential structure and to control ion energy and ion flux independently. The ratio between mean ion energy and mean sheath thickness reflects the effect of collisions on the ion energy distributions and enables estimates of sheath thickness and bulk plasma parameters to be made which are compared with values obtained by Langmuir probe measurements. We are able to demonstrate that changes in sheath potential also affect, via secondary electrons, the ionization regime in the discharge and this can be utilized to control the species composition in the discharge.

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