Within this project we are developing single-sided AC-coupled silicon strip sensors and DC-coupled hexagonal pad sensors for applications in High Energy Physics (HEP) experiments. The project started with a feasibility study to re-produce the state-of-the art of silicon sensors of that time, which were based on high-resistivity n-type float-zone 6-inch silicon wafers. Later, the first silicon strip sensors on 8-inch p-type wafers were produced within this project. This influenced the decision of another project to build a silicon sensor based sampling calorimeter. This paper presents the history, current status, and prospects of this sensor development project, jointly conducted by the

The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker (ITk) for the High Luminosity Large Hadron Collider (HL-LHC). An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying Abstract ATLAS ITk specifications. The semiconductor manufacturing company Infineon Technologies AG was one of the two foundries, along with Hamamatsu Photonics KK, evaluated for the production of the new barrel silicon strip sensors for the ITk. This work presents the complete tests carried out on the sensors designed and fabricated in 6-inch wafers in the framework of the Market Survey. The full prototype wafer layout was designed using a Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. A complete characterization of the large area strip sensors fabricated is presented, including the results of proton and neutron irradiations, and their compliance with the specifications of the ITk strip tracker. This work is supported and financed in part by the Spanish Ministry of Science, Innovation and Universities through the Particle Physics National Program, ref. FPA2015-65652-C4-4-R (MICINN/FEDER, UE), and co-financed with FEDER funds. The authors also want to thank the participation of Infineon Technologies AG and the irradiation facilities CYRIC and IJS.