I ABSRTACT This paper describes a microscanner actuated by self-aligned electrostatic vertical combdrives. A tilt motion without unwanted vertical or lateral piston motions of a mirror, namely, a pure-rotation is very important for a scanning dcvice h r high resolution. We have designed and fabricated a pure-rotation microscanner in double SO1 wafer actuated by self-aligned vertical electrostatic combdrives, and measured the characteristics. The design of the comb electrodes makes it possible to produce the tilt motion of the microscanner without piston motions. The static optical deflection angle of the device was measured as 7.6 degrecs at 150V&. The resonant frequency was found to be 660Hz.
In this paper, we report the fabrication method of a freestanding carbon nanotube (CNT) bridged between opposed silicon electrodes with a narrow gap (0.5 -5 pm), which was fabricated by a silicon micromachining technique. After the metallization of nickel (Ni) or iron (Fe) as a catalyst for CNT growth, the CNT was grown between these electrodes with an application of the voltage of 30V during the growth by hot-filament chemical vapor deposition (HF-CVD) using acetylene diluted by hydrogen, as a source gas. The CNT was grown from the negative electrode to another one. From the measurement of current-voltage (I-V) characteristics the contact between the CNT and the silicon electrode shows ohmic behavior and the resistivity of the CNT was estimated to he about 4x10.' Q a n . This nanofahrication technique will he applicable to the nanomechanical elements integrated an individual CNT.
We have developed heavily boron-doped piezoresistivc single-crystalline silicon AFM cantilevers which aimed for operating at low temperatures including cryogenic temperature range. The optimization of design to increase the sensitivity and reduce noise at cryogenic temperature is considered by controlling the dopant concentration. The relatively low concentration of 6 x 10" atomsicin' shows the lowcst Minimum Detectable Force (MDF) at room temperaturc (R.T.) by calculation. However, it was predicted that the optimal concentration of dopant was shifted to a higher concentration at cryogenic temperature in MDF by calculation. Firstly we developed AFM cantilevers integrated with piezoresistive elements at the support of the cantilever. Actually the fabricated heavily doped cantilever shows that the sensitivity at cryogenic temperature increased by 1.6 times at 5 K than that at R.T..
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