AbstructA Ku-band matched embedded-FET phase shifter achieving compact and low insertion loss performance is described. It consists of only a few circuit elements of a series embedded-FET incorporated with a high impedance line and an inductive matching network switched by an SPST switch. A six-bit phase shifter has been developed, consisting of these matched embedded-FET phase shifters for lower bit sections (22.5°, 11.25 , 5.625') and high pass / low pass type phase shifters [1]-[2] for higher bit sections. It has a small size and a low insertion loss.
Articles you may be interested inGate pulse frequency-dependent kink effects in GaAs metal-semiconductor field-effect-transistors with a lowtemperature-grown buffer layer Selectively dry gate recessed GaAs metal-semiconductor field-effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits Low-resistivity W/WSi x bilayer gates for self-aligned GaAs metal-semiconductor field-effect transistor largescale integrated circuits J. Vac. Sci. Technol. B 5, 1317 (1987); 10.1116/1.583608Characterization of GaAs self-aligned refractory-gate metal-semiconductor field-effect transistor (MESFET) integrated circuits A fully ion-implanted self-aligned T-shaped gate GaAs metal-semiconductor field-effect transistor ͑MESFET͒ with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit ͑MMIC͒ amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology.
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