A new test structure to measure precise location of hot-carrier-induced photoemission peak from gate center of subquarter-micron n-MOSFETs

A test structure for spectrum analysis of hot-carrier-induced photoemission from mosfets

“…This effect was also clearly observed from electro-luminescence in MOS device with Si-implanted gate oxide [28], [29]. Although most of photons were observed through silicon dioxide films of sidewall and insulator layers, the layers were almost transparent for all wavelength range measured, which can be estimated from the observation of the photoemission profile from the MOSFET with m fabricated on the same chip [27]. The logarithmic plot of photon counts versus photon energy shows linear relation below 2.1 eV as shown in Fig.…”

“…The characteristics can also be related to the position of photon emission in channel and drain region. We need further detailed and precise experimental data to clearly explain the origin of the hot-carrier-induced photoemission in compar- ison with the experimental data of photoemission peak position analysis [27] and the device simulation results of electric field, electron temperature and radiative recombination of electrons and holes.…”

“…The photoemission regions are drain side and the photoemission-intensity is uniform for all individual MOSFET. The measured photoemission spectrum can be estimated as that from a separate 10 m width MOSFET, of which we have provided test structures on the same chip for the measurement of photoemission peak position to compare the spectrum analysis [27]. Consequently, we can analyze the photoemission position and the photoemission spectrum for the same width MOSFET.…”

“…The source/drain interconnections were formed using two-level aluminum process to reduce the series resistance and to supply a uniform applied voltage to each MOSFET under a large drain current. The distance between the polysilicon gate and the source/drain aluminum electrodes was designed 1.5 m to avoid distortion of the photoemission intensity due to the reflectance/interference effects of the aluminum electrodes [25], [27].…”

A test structure for two-dimensional analysis of MOSFETs by hot-carrier-induced photoemission

“…On the other hand, hot-carrier effects have become clear for deep submicron level MOSFETs. Since the hot carriers cause photon emission, measurements and analyses of hot-carrier-induced photons using a photoemission, microscope becomes useful to study the high electric fields in MOSFETs [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19]. Not only spectrum analyses but also 2-D (two-dimensional) photoemissionintensity analyses, which can measure a precise position of photoemission peak with a photoemission microscope, have been reported.…”