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This paper presents the design of a 2.4GHz LC VCO implemented using CMOS technology. Designed using a combination of both 0.13um and 0.35um CMOS process, this cross-coupled CMOS LC VCO achieves a simulated phase noise of -114.8dBc/Hz at 1MHz of offset frequency. The output frequency of the VCO can be tuned from 1.973GHz to 2.667GHz, which correspond to 694MHz tuning range, obtained by tuning the control voltage to the junction varactor pairs. The VCO consumes 12mW power from a 3V DC supply voltage.

A single-pole double-throw (SPDT) transmit/receive (T/R) switch for 900MHz applications has been designed in a 0.18µm CMOS process. The switch exhibit a 16dB input 1-dB compression point with output 1-dB compression point of 12.9dB. At 900MHz of frequency operation, the switch has excellent characteristics whereby the insertion loss is only around 3dB and isolation around 40dB for both transmitting and receiving operations. The proposed switch achieves return loss of -11dB during these operations with switching response time around 4.5ns.

This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC bias of -0.2 V. The PA delivers maximum linear output power of 22.21 dBm while achieving maximum power-added-efficiency (PAE) of 37.02 %. The PA has an input and output return loss at 20.76 dB and 25.19 dB respectively. Having a current consumption of 132 mA, this PA achieves a small signal gain of 22.34 dB. The proposed PA is designed within a die size of about 2.08 x 1.03 mm 2 on GaAs substrate. Index Terms -Cascade, GaAs p-HEMT, Ku-band, MMIC, power added efficiency, power amplifiers.

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