2011 IEEE Regional Symposium on Micro and Nano Electronics 2011
DOI: 10.1109/rsm.2011.6088303
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15 GHz medium power amplifier design for Ku-band applications

Abstract: This paper present the design of 2-stage 15 GHz power amplifier (PA) using 0.15 µm GaAs p-HEMT technology. At operating frequency of 15 GHz (Ku-band), each single PA stage was designed for optimum power and efficiency of the transistor, with 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 4.5 V and DC bias of -0.2 V. The PA delivers maximum linear output power of 22.21 dBm while achieving maximum power-added-effici… Show more

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