We have successfully mitigated the out‐diffusion of Ge during molecular beam epitaxy of InGaAs on Ge by using a GaAsSb barrier layer as evidenced by secondary ion mass spectroscopy. Compared to GaAs, this GaAsSb barrier layer also results in a smoother surface morphology with its root‐mean‐square roughness of 0.7 nm due to the surfactant effect of Sb. Using a step‐graded GaAsSb and AlGaAsSb metamorphic buffer layer, a 200‐nm p‐type In0.53Ga0.47As layer grown on Ge exhibits a hole mobility of 38 cm2 V−1 s−1 with a hole concentration of 2.6 × 1019 cm−3 at 300 K and 53 cm2 V−1 s−1 with a hole concentration of 1.2 × 1019 cm−3 at 77 K.

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