Intramolecularly base-stabilized four-coordinated metallacyclic organoaluminium, -gallium, and -indium compounds CsHl0-Al(CHz)3NMez (41, C4H8Ga(CHz)&JMe~ (51, Cd-IIOGa(CHz)3N-Mez (S), C,HlOGaCH2CH(Me)CHzNMez (?), C4H8Ga(CHZ),NMez Group III/V semiconductors are of great interest in the optoelectronic industry because of their utility in digital high speed devices'). The production of such semiconducting layers can be achieved by vapor phase epitaxy (MOVPE) by using organometallic compounds as source materials2-'). In general, a group I11 trialkyl compound, like trimethylgallium or triethylindium, is treated with a group V hydride, like PH, or AsH3, at 600-700°C to give the respective III/V product as illustrated in the following equation for the case of GaAs.(CH3)3Ga + ASH, -GaAs + 3 CH, However, owing to their limited chemical and thermal stability, the commonly used group I11 precursors cause difficulties during the epitaxial process. Very often formation of alkoxy impurities due to traces of oxygen is observed, and even spontanous decomposition of the source material may occur. In addition, some compounds likc solid trimethylindium require heating of the bubbler and the gas lines in order to overcome evaporation problems.By the application of intermolecular adducts like solid Me,Ga.NMe3 or Me31n.PEt3 as source materials such side reactions can be reduced drastically; but even these precursors of significantly enhanced thermal stability cause evaporation problems6,'). The use of the concept of intramolecular coordination, however, has been expected to yield monomeric volatile compounds which are liquids at room temperature or very low melting solids.Recently, we have reported on the synthesis and characterization of some novel intramolecularly base-stabilized gallium and indium compounds with the bidentate 3-(dimethy1amino)propyl and 4-(dimethy1amino)butyl ligands as well as on initial results in MOVPESp''). In this paper we report on our detailed studies on metallacyclic compounds of aluminium, gallium and indium.
Synthesis and Properties