In most investigations of dislocations by EBIC microscopy contrat seems to be caused by impurity atoms segregated to the dislocations. But principally also intrinsic acceptors along the dislocation should be detectable by EBIC microscopy. In both the cases the space charge cylinder (SCC) around the charged dislocation acts as capture region. It is shown, that highly dislocated sheets of silicon acta as two dimensional diodes and conductors. Using screw‐dislocations in GaAs inclined to the surface an upper limit is determined for the radius of the SCC (50 nm) and the reduced minority carrier lifetime (7 × 10− 12 s). For GaAs a dependence of the diffusion length on the beam current is found.